55~115GHz宽带GaN功率放大器MMIC

55～115GHz Broadband GaN Power Amplifier MMIC

研制了一款基于NEDI 50nm GaN功率MMIC工艺的3mm波段高增益、宽频带功率放大器芯片。芯片采用平衡放大器结构,结合多节微带线阻抗匹配方式实现宽带放大器。由于该频段器件增益较低,通过合理选择输出阻抗点,使放大器实现较高的增益和较大的输出功率。测试结果表明,芯片在8V漏压连续波下工作,在55～110GHz在片测试频率范围内,增益达到15dB,输入输出端口回波损耗基本小于-10dB,便于系统应用。通过分频段测试,在55～115GHz频率范围内,最大饱和输出功率达到180mW。

A 3 mm-band high-gain broadband power amplifier MMIC was successfully developed based on the technology of 50nm GaN power MMIC at Nanjing Electronic Devices Institute (NEDI).This balanced amplifier was designed with multi-section microstrips for broadband impedance matching.As the gain of the device at this frequency band was low,the load impedance was appropriately chosen for high gain and output power.The measurement results show that, under the condition of drain bias 8V and continuous wave,the gain of MMIC is 15dB,the input and output return loss are basically less than -10dB across the on-wafer tested frequency band of 55~110GHz,which is suitble for system application.The maximum saturated output power is 180mW through different frequency sections testing from 55GHz to 115GHz.