C波段200W高增益GaN功率模块

200W High Gain C-band GaN Power Module

报道了一款采用0.35μm GaN HEMT工艺的C波段高增益功率模块。模块采用三级放大电路拓扑,正负电源结构设计。末级匹配电路采用低损耗高Q值的陶瓷片实现,通过一级L-C阻抗变换和两级威尔金森功分器,既进行了阻抗匹配又实现了功率合成。前级和中间级匹配电路采用高集成GaAs匹配电路实现,通过优化前级和中间级的推动比和级间匹配电路,降低了驱动级功耗。整个模块采用低热膨胀率、高热导率的铜-钼-铜(CMC)载板实现,解决了管芯热匹配和热传导的问题。通过这三种技术途径有效实现了模块的高效率、小型化和低成本。测试表明,该器件在5.2～5.9GHz频带内、28V工作电压下,饱和输出功率达到了200 W以上,此时功率增益为26dB、典型功率附加效率(PAE)为50%。

A C-band power Module (PM)with high gain was reported utilizing 0.35μm GaN HEMT technology.The PM was designed by adopting a three-stage topology,fed by positive and negative power sources.The matching circuits of the last stage were fabricated on a ceramic substrate with low loss and high Q,which were matched by using a one-stage L-C impedance transformer and a two-stage Wilkinson power divider to guarantee the impedance transformation as well as the power synthesis.The matching circuits of the driving stage and inter-stage were realized by adopting the high integrated GaAs substrate.The power dissipation of the driving stage was reduced by optimizing the driving ratio and inter-stage matching circuits.The PM was assembled on a CMC plate with low thermal expansion coefficient and high thermal conductivity to solve the thermo-match and the heat dissipation of the HEMT.By these three technological approaches,high efficiency,miniaturization and low-cost of the PM were effectively realized.The test shows that the output power of PM is more than 200W over the 5.2GHz to 5.9GHz frequency range at 28V operating voltage,with power gain of 26dB,typical PAE of 50%.