弧流对Ti—Si—C膜层结构与性能的影响

Influence of arc current on structure and properties of Ti-Si-C coatings

电弧离子镀沉积膜层具有放电温度高、离化率高和沉积速率快等特点,可以在较低温度下促进Si—C成键,是获得含Si—C键膜层的一种经济实惠的方法。本文使用Ti—Si合金靶,在Ar和C2H2气体环境下,在铝合金衬底上制备了Ti—Si—C膜层,并分析和研究了不同弧流下沉积膜层的相组成、磨损和腐蚀性能。结果显示,不同弧流下沉积的膜层是由B1型Ti C相、立方结构的Si C相和金属Ti相组成的复合结构;大弧流由于放电温度高,有利于膜层中Si—C键的形成.弧流增加,靶材蒸发速率加快,沉积膜层的厚度增加,同时,由于靶材附近单位时间内气化和离化的Si和Ti数量增加,沉积膜层中Si和Ti含量和增加而C含量降低.弧流增加,膜层中碳化物总含量减少,造成膜层摩擦系数逐渐增加而耐磨性降低,但膜层的耐腐蚀性能增加.适当弧流下的沉积膜层可获得优异的磨损和腐蚀综合性能.

Arc ion plating is an economical deposition coating method for coatings containing Si-C bonds due to its excellent characteristics such as high arc discharge temperature,high ionization rate,and high deposition rate,which is favorable to the formation of Si-C bond at l low temperature. Ti-Si-C coatings were prepared by arc ion plating on Al alloy substrate using Ti-Si alloy target under Ar and C2H2 atmosphere.Phase composition,wear resistance,and corrosion resistance of deposition coatings under different arc currents were analyzed and studied. Results showed that the deposited coatings were composed of B1 type Ti C phase,cubic SiC phase,and metal Ti phase. High arc current was favorable to the formation of Si-C bond due to high arc discharge temperature. The thickness of deposition coatings increased with the increase of the arc current due to higher vapor rate of the target materials. The Si and Ti content in coatings increased but C content decreased with increasing deposited arc current due to more vaporized and ionized Si and Ti near target surface in unit time. The overall carbide contents reduced and the wear resistance decreased but the corrosive resistance enhanced with the increase of the deposited arc current. The deposited coating can obtain excellent wear and corrosive resistance by using appropriate deposited arc current.