Y_2O_3和ln_2O_3复合掺杂对Zn-Bi系压敏陶瓷的影响

Influence of ln_2O_3 and Y_2O_3 Co-doping on Zn-Bi Varistor Ceramics

通过复合掺杂0.08mol%Y_2O_3和xmol%ln_2O_3,采用固相法制备Zn-Bi系压敏陶瓷,研究了烧结温度为1120℃保温3小时条件下,掺杂不同剂量ln_2O_3对ZnO陶瓷的晶粒大小、显微结构以及电性能的影响。研究表明随着复合掺杂ln_2O_3剂量的增大,ZnO压敏陶瓷样品的晶粒大小先减小后增大。少量复合掺杂Y_2O_3和ln_2O_3,晶粒的生长均匀细小,显微结构致密;晶界成分和结构得到了优化,改善了非线性特性。复合掺杂0.08mol%Y_2O_3和0.7mol%ln_2O_3的压敏陶瓷材料适合制作高电位梯度避雷器。其压敏电压梯度可达1080 V/mm,非线性系数为55,漏电流为0.60μΑ。

The Zn-Bi varistor ceramics was prepared by solid phase method with the co-doping of 0.08mol%Y2O3 and x mol%ln2O3.The effect of the co-doping on the as-prepared varistor ceramics obtained after being sintered at 1120°C for 3 hours was observed.The doping ratio of ln2O3 on the grain size,microstructure and electrical properties of ZnO ceramics were studied.The results show that,when co-doped with a small amount of Y2O3 and ln2O3,the grain size of the ZnO varistor ceramics is more uniform and finer,the microstructure is more compact,the composition and structure of grain boundary are optimized,and the nonlinear characteristics are improved.The varistor ceramic materials doped with 0.08mol%Y2O3 and 0.7mol%ln2O3 are suitable for fabricating high potential gradient arresters.The varistor voltage gradient can reach 1080 V/mm,the nonlinear coefficient is 55,and the leakage current is 0.60μA.