摘要
针对静态磁场和非静态磁场在硅晶体生长中的应用研究现状,综述了磁场对硅晶体生长过程中熔体流动、固液界面形态、杂质含量及分布的影响,重点对比分析了静态磁场与非静态磁场的特点。总结了该应用当前存在的问题,并对未来的技术发展进行了展望。
In view of the application of static and non-static magnetic fields on the growth of silicon crystals, the effects of magnetic field on melt flow, solid-liquid interface morphology, impurity content and distribution in the process of silicon crystal growth are covered. The characteristics of static and non-static magnetic fields were emphatically compared and analyzed. The existing problems in the application were summarized, and the development trends in this field were prospected.
作者
饶森林
张发云
罗玉峰
熊含梦
李云明
胡云
章娟
RAO Senlin;ZHANG Fayun;LUO Yufeng;XIONG Hanmeng;LI Yunming;HU Yun;ZHANG Juan(School of New Energy Science and Engineering,Xinyu College,Xinyu 338004,China;Key Laboratory of University in Jiangxi for Silicon Materials,Xinyu 338004,China;School of Mechanical and Electronic Engineering,Nanchang University,Nanchang 330031,China;East China Jiaotong University,Nanchang 330031,China)
出处
《铸造技术》
CAS
2019年第2期229-234,共6页
Foundry Technology
基金
国家自然科学基金资助项目(51664047)
江西省高等学校科技落地计划面上项目(KJLD12050)
江西省科技支撑计划面上项目(20123BBE50116)
江西省教育厅科学技术研究项目(GJJ161200
GJJ161199)
关键词
磁场
晶体硅
固液界面
熔体流动
magnetic field
silicon crystal
solid liquid interface
melt flowing
