摘要
采用原子层沉积技术(ALD)在石英片和n型(100)Si上沉积高阻氧化锌铝(AZO)纳米叠层薄膜,通过扫描电镜(SEM)、原子力显微镜(AFM)和X射线衍射仪(XRD)和体积表面电阻率测试仪对薄膜的表面形貌、晶体结构及电学性能进行表征分析,分别研究了不同沉积温度及退火温度对薄膜结构及性质的影响。研究结果表明AZO薄膜存在最优的生长温度窗口为170~200℃,同时发现,经过退火处理的薄膜电阻率明显增大,且适当的退火有助于薄膜结构的优化,经过400℃下退火4 h后的薄膜电阻趋于稳定,可作为微通道板(MCP)打拿极高阻导电层材料。
The high-resistance aluminum zinc oxide(AZO)nano laminated films deposited on the quartz and n-type(100)Si by atomic layer deposition(ALD)technology.The surface morphology,crystal structure and electrical properties of the films were characterized and analyzed by the scanning electron microscopy(SEM),atomic force microscope(AFM),X-ray diffraction(XRD)and volumetric surface resistivity tester.The effects of different deposition temperatures and annealing temperatures on the structure and properties of films were researched,respectively.The results show that the optimal growth temperature window of the films is from170℃to 200℃.In the meantime,it is found that the resistivity of the annealed films significantly increases,and the appropriate annealing is helpful to optimize the structure of the thin films.The resistance of the films tends to be stable after annealing at 400℃for 4 h.The film can be used as the dynode high-resistance conductive layer material for the microchannel plate(MCP).
作者
丁铮
关钧
端木庆铎
Ding Zheng;Guan Jun;Duanmu Qingduo(School of Science,Changchun University of Science and Technology,Changchun 130022,China)
出处
《微纳电子技术》
北大核心
2019年第2期140-144,共5页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(61077024)
