基于Simscape的碳化硅功率器件精确建模与仿真

Accurate modeling and simulation of silicon carbide power devices based on Simscape

提出了一种借助查表法实现数据拟合的参数化建模思想,基于Simscape模块实现碳化硅功率器件的精确建模与仿真。通过深入研究碳化硅功率器件的工作原理及导通特性,介绍了非线性可变电阻及非线性可变电容元件的具体建模方法,并以MOSFET机理模型为研究基础建立SIC-JFET仿真模型。在MATLAB/Simulink仿真环境下,对比分析仿真结果与器件实测波形吻合度,验证所建模型可用性与精确性。研究结果表明,所建模型可有效模拟SIC-JFET静、动态特性,实现了碳化硅功率器件的精确建模,为SIC-JFET器件的开关过程分析及损耗计算提供了重要依据。

In this paper, a parametric modeling idea of data fitting by means of look-up table method was proposed, and the accurate modeling and simulation of SiC power devices were realized based on Simscape module. Through in-depth study of the working principle and conduction characteristics of silicon carbide power devices, the specific modeling methods of nonlinear variable resistance and nonlinear variable-capacitance elements were introduced. Moreover, setting the mechanism of MOSFET as a foundation, a SIC-JFET simulation model was established. Under the simulation environment of MATLAB/Simulink, the comparison of simulation results with measured waveforms of the device was compared and the availability and accuracy of the model were verified. The research results show that The model can accurately simulate the static and dynamic characteristics of the SIC-JFET and achieve precise modeling of silicon carbide power devices, providing an important basis for the SIC-JFET switching process analysis and loss calculation.