基于结温补偿的IGBT模块键合线失效监测方法

Failure Monitoring Method of IGBT Module Bonding Wire Based on Junction Temperature Compensation

针对目前绝缘栅双极型晶体管(IGBT)结温估测存在误差的问题,利用通态压降作为结温估计的函数,考虑IGBT模块内部互连材料等效电阻的影响,对估计结温进行补偿,通过实验验证补偿后的温度更接进芯片的真实温度。在此方法的基础上,模拟IGBT模块老化的进程,确定键合线失效阈值,并建立键合线失效基准面。实验结果表明健康的IGBT功率模块和故障模块在三维曲面上具有很好的区分度,验证了运用该方法监测模块内部键合线失效情况的可行性。

At present,there has error in estimating the junction temperature of insulated gate bipolar transistor(IGBT). The on-state voltage drop is used as the function of the junction temperature estimation.Considering the effect of the equivalent resistance of the interconnect material in the IGBT module,the estimation of the junction temperature is compensated.The experiment shows that the temperature after compensation is more connected to the true temperature of the chip.Based on this method,the aging process of IGBT module is simulated,the failure threshold of bonding wire is determined,and the failure base level of bonding wire is established.The experimental results show that the healthy IGBT power module and the fault module have a good segmentation on the 3D surface,and the feasibility of using this method to monitor the bond wire failure is verified.