对硅片进行无抗蚀膜光化学蚀刻的一种新方法

A New Method of Resistless Photochemical Etching for Silicon Wafer

研究了一种在硅片上进行无抗蚀膜光化学蚀刻的新方法 ,使用过氧化氢 (H2 O2 )和氟酸 (HF)作为光化学媒质 ,使用ArF紫外激光作为光源 ,无需事先加工抗蚀膜 ,可直接在硅表面进行蚀刻。在H2 O2 与HF的浓度比为 1.3时 ,蚀刻效果最佳 ,当激光能量密度为 2 9mJ/cm2 ,照射脉冲数为 10 0 0 0次时 ,得到 2

A new method of resistless photochemical etching for silicon wafer is developed, which is using hydrogen peroxide (H 2O 2) and hydrogen fluoride (HF) as activated species, ArF ultraviolet laser as a photon source. Silicon wafer can be directly etched without photo-resists. When the concentration ratio of H 2O 2/HF is 1.3, the optimized etching was found. At the energy density of 29 mJ/cm 2 as well as the shot numbers of 10000, the maximum etching depth of 210 nm was obtained.