非晶硅a-Si:H膜中氢含量的深度分布研究

DEPTH PROFILE INVESTIGATION FOR THE HYDROGEN CONTENT IN THE HYDROGENATED AMORPHOUS SILICON

用弹性反冲法对氢化非晶硅(a-Si:H)作了氢剖析.测量了(本征)I-a-Si:H单层膜及PIN-a-Si:H多层膜.结果表明,在～1000A—～1500(?)表面层中,氢含量从外到内急剧下降,而在内部维持一稳定值,并且随着衬底温度增加,膜中氢含量线性减少.氢含量的总误差小于10％,探测深度为～5000.

The elastic recoil detection technique is used to measure the hydrogen profile in the hydrogenated amorphous silicon (a-Si:H). Both of mono-layer (intrisic) I-a-Si: H and multi-layer PIN-a-Si: H films have been analysed. The results show that in the layerof -1000A-1 500A thickness near the surface the hydrogen contents sharply fall with thedepth increase and are kept a stationary level within films. The hydrogen content decreases with the increase of the substrate temperature. The total error determined for the hydrogen contentsis less than 10%. The depth resolution is -500A in the near-surface area and the detected depth is -5000A.