模拟非硅衬底上转换效率10%的多晶硅薄膜太阳电池

POLYCRYSTALLINE SILICON THIN FILM SOLAR CELLS WITH EFFICIENCY OF 10% ON SIMULANT NON-SILICON SUBSTRATE

在重掺杂非活性单晶硅片上生长一定厚度的SiO2 ,开窗口后作为衬底 ,利用快速热化学气相沉积(RTCVD)及区熔再结晶 (ZMR)方法制备多晶硅薄膜太阳电池。由于采用了区熔再结晶 (ZMR)的方法 ,获得了取向一致的多晶硅薄膜 ,为薄膜电池的制备打下了良好的基础 ,转换效率达到 10 2 1%。

After growing SiO 2 layer with a certain thickness on heavy diffusion inactive C Si wafer, opening windows, then fabricating polycrystalline silicon thin film solar cells on it with Rapid Thermal Chemical Vapor Deposition(RTCVD) and Zone Melt Recrystallization(ZMR) method. Due to using ZMR method, consistent tropism silicon thin film was obtained, it provides a fine base for fabrication of thin film solar cells. The best efficiency of polycrystalline silicon thin film solar cells reached up to 10 21%.