浮栅ROM器件的质子辐射效应实验研究

EXPERIMENTAL STUDY ON PROTON IRRADIATION EFFECTS OF FLOATING GATE ROMS

给出了浮栅ROM器件的质子辐射效应实验结果.认为浮栅ROM28C256和29C256的质子辐射效应不是单粒子效应,而是质子及其次级带电粒子产生的累积剂量造成的总剂量效应.器件出现错误有个质子注量阈值.对于29C256,高温加电退火容易消除质子产生的辐射损伤;对于28C256,高温加电退火不易消除质子产生的辐射损伤.动态监测和静态加电的器件都出现数据错误,且不能用编程器重新写入数据.然而不加电的器件在更高的质子注量辐照下未出现错误.对于应用浮栅ROM器件的航天器电子系统,冷备份是提高其可靠性的有效手段之一.

Experimental results of proton irradiation effects are given for Floating gate ROMs. The proton irradiation effects in FLASH ROM and EEPROM are the total dose effects rather than the Single Event Effects. These are attributed to the accumulative dose of both original and secondary protons. There is a proton fluence threshold. Errors occur when proton fluence is above the threshold. It is easy to eliminate the damage produced by proton irradiation for 29C256 by annealing in power on under 100癈, however, it is difficult for 28C256. Data errors occur in devices that are measured during irradiation and irradiated in power on, moreover, new data cannot be written in these devices with programmer. However, under more proton fluence, there is no error in devices in power off mode and new data can be written in these devices with programmer. It is an effective method to backup some devices in power off mode to improve the reliability of spacecrafts in which FLASH ROMs and EEPROMs are used.