摘要
利用透射式 Ga As光电阴极 Al Ga As/ Ga As外延层的结构特点及其 X射线衍射摇摆曲线分析方法 ,解释了 Al Ga As/ Ga
This paper described the structure characteristics and analysis method of rocking curve of AlGaAs/GaAs epitaxial layer,explained the phenomenon of broading of FWHM and increasing of diffraction peak seperation of rocking curve of AlGaAs and GaAs epitaxial layer with their upgrading growth temperature.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2002年第4期458-462,共5页
Acta Photonica Sinica