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透射式GaAs光电阴极AlGaAs/GaAs外延层X射线衍射摇摆曲线研究

THE X-RAY DIFFRACTION ROCKING CURVE OF AlGaAs/GaAs EPITAXIAL LAYER OF TRANSPARENT GaAs PHOTOCATHODE
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摘要 利用透射式 Ga As光电阴极 Al Ga As/ Ga As外延层的结构特点及其 X射线衍射摇摆曲线分析方法 ,解释了 Al Ga As/ Ga This paper described the structure characteristics and analysis method of rocking curve of AlGaAs/GaAs epitaxial layer,explained the phenomenon of broading of FWHM and increasing of diffraction peak seperation of rocking curve of AlGaAs and GaAs epitaxial layer with their upgrading growth temperature.
出处 《光子学报》 EI CAS CSCD 北大核心 2002年第4期458-462,共5页 Acta Photonica Sinica
关键词 GaAs ALGAAS X射线衍射 光电阴极 外延层 结构特点 砷化镓 镓铝砷化合物 摇摆曲线 GaAs AlGaAs X-ray Photocathode Diffraction Epitaxy
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参考文献5

  • 1[1]Fewster P F.X-ray diffraction from low dimensional structures.Semicond Sci Technol,1993,8(10):1915~1916
  • 2[2]Fewster P F.Composition and lattice mismatch measurements of thin semiconductor layers by X-ray diffraction.J Appl Phys,1987,62(10):4154~4158
  • 3[3]Bartels W J,Nijman W J.X-ray double crystal diffractometry of Ga1-xAlx As epitaxial layers.J Crystal Growth,1978,44(25):522~523
  • 4[4]van der Sluis P.Determination of strain in epitaxial semiconductor structures by high-resolution X-ray diffraction.1994,A58:129~134
  • 5[5]Bartels W J,Nijman W J.X-ray double crystal diffractometry of Ga1-xAlxAs epitaxial layers.J Crystal Growth,1978,44(25):518~525

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