1.30-2.21MeV质子在硅上的160°散射截面测量

Non-Rutherford Elastic Scattering Cross Sections for 160° Backscattering of 1.30-2.21 MeV Protons on Silicon

采用薄靶对能量 1.30 - 2 .2 1MeV质子在纯度为 99.99%硅上的非卢瑟福弹性背散射截面(16 0°背散射角 )进行了测量 .质子束由 2× 1.7MV串列加速器提供 ,测量仪器采用金硅面垒探测能谱仪 .实验中最低能区进入卢瑟福弹性散射能区 ,测量结果与以前发表的结果进行了比较 .所测量数据可供从事背散射分析技术的有关人员参考 .

The elastic backscattering cross sections of H + from silicon for a wide energy range are very useful parameters in the proton backscattering analysis for investigating silicon content and distribution profiles in the films. It is necessary to measure the scattering cross sections with good accuracy at a large scattering angle for the applications of proton backscattering analysis. The present paper reports our measured results of differential elastic backscattering cross sections of 1.30-2.21 MeV protons on silicon of 99.99% purity at a laboratory scattering angle of 160°. Analyzed beams of H + were provided by a 2× 1.7 MV tandem accelerator at Lanzhou University. The lowest proton energy in the experiment is in the Rutherford backscattering energy region. The measured cross sections are presented and compared with previous graphical data. The data have been presented in a form that should be useful for those who wish to use the cross section values of 28 Si(p, p) 28 Si near 160° in a wider energy region.