摘要
对非掺杂 (ND)半绝缘 (SI)液封直拉 (LEC)GaAs单晶在 5 0 0～ 1170℃温度范围进行了单步和多步的热处理和淬火 ,研究了热处理及淬火对GaAs中EL2浓度的影响 。
Simple,multi step Annealings and quenchings were carried out in a temperature range from 500℃ to 1170℃ for undoped (ND) semi insulating (SI) LEC GaAs.The effects of the annealing and quenching on the EL2 concentration in GaAs are investigated and the mechanism of the effects is discussed.
出处
《红外技术》
CSCD
北大核心
2002年第1期30-33,共4页
Infrared Technology
基金
河北省自然科学基金资助项目 (1 950 51 )
关键词
半绝缘砷化镓
热处理
淬火
EL2浓度
砷沉淀
Semi insulating GaAs
Annealing
Quenching
EL2 concentration
As precipitation
