磁控溅射的Ge/Si异质结构在退火过程中的Raman光谱研究

A Study on Regrowning of Ge/Si Heterostructures Made By Magnitron Sputter Deposition after Annealed

用Raman光散射的方法 ,研究了磁控溅射技术制备的Ge/Si系列异质材料在退火过程中的再生长情况 ,对不同的样品进行结构变化分析。实验结果显示 :Ge/Si异质材料在退火过程中的再生长受生长态条件限制 。

Raman spectra had been used to study the regrowning of Ge/Si heterostructures made by magnitron sputter deposition after annealed.There is an analysis on transformation of the structure. The result shows that the regrowning of Ge/Si heterostructures is controlled by the as-deposited structure, which result in the transformation after annealed.