反应烧结碳化硅研究进展

Development of Reaction-Bonded Silicon Carbide

对有关反应结合碳化硅 (RBSC)材料的研究进展作了综述 ,并对存在的问题和今后可能的发展方向提出了自己的见解 ,包括 :进一步提高性能 ;降低游离硅含量 ,提高使用温度 ;提高材料的可靠性和稳定性 ;

Development of reaction bonded silicon carbide was introduced in this paper,the existing problems and the further development were also discussed,including further improving the properties of RBSC,increasing the working temperature;enhancing the repeatability exponential(Weibull modular)of the RBSC material and lowering the manufacturing cost.