摘要
利用半导体器件二维模拟软件数值模拟计算了不同上升时间的快前沿电磁脉冲对PN结的毁坏过程,对计算结果作了分析,得到了一维器件模拟无法得到的电流通道等其他二维效应,详细地给出了器件正常工作、失效直至烧毁的全过程。
By using of the program of two -dimensional device s imulation,we have simulated the behavior of PN j unction device that is under E MP with different rapi d -rise time and analyzed the results.The effects such as two -dimensional current pas-sage are given which could not be provided by one -dimensional device simulation.The whole process during which the device i s under working,lapse and burnout is described in detail.
出处
《微电子学与计算机》
CSCD
北大核心
2002年第3期17-20,共4页
Microelectronics & Computer
关键词
电磁脉冲
漂移扩散模型
结热二次击穿
PN结
失效
烧毁
电子元器件
二维数值模拟
Electromagnetic Pulse(EMP ),Simulation of semiconductor device,Mo dels of drift -diffusion,Junction heating secondary breakdown
