氮化镓微米晶须及纳米线的制备与研究

Synthesis and investigation of micron sized GaN whiskers and nanowires

报道了利用CVD方法大量制备超纯氮化镓微米晶须及纳米线的最新结果.利用镍、铟及其化合物等做催化剂,将金属镓放置在氨气氛中1000℃左右进行反应,结果在衬底上获得了大量的氮化镓微米晶须,及纳米线.许多晶须还通过自组装形成了非常奇特的如梯子状的形貌.研究还发现,大部分氮化镓微米晶须的择优生长方向为<0001>方向(c轴方向).X射线衍射谱揭示,反应产物为非常纯的氮化镓晶体,而低温光致发光谱分析则发现,氮化镓微米晶须在520nm处有一个杂质发光峰.这一研究结果有助于了解氮化镓晶体的生长机理,并可望应用于微米、纳米蓝光发光二极管等器件.

The large-scale synthesis and investigation of micro-sized GaN whiskers and Nanowires via a CVD approach was reported.Using Ni,In,In 2 O 3 ,and InCl 3 as catalysts,metallic Ga was placed in a tube furnace to react with NH 3 at about 1000℃,and large amount of micron sized GaN whiskers and nanowires were found grown on the substrate.Many whiskers self-assembled into very peculiar morphology such as a laden structure.X-ray diffraction showed that the product consists of very pure crystalline GaN,while low-temperature photoluminescence(PL)test revealed an emission peak around520nm,which is ascribed to the emission from defects.The results shall shed some light on the growth mechanism of the GaN,and will find proper application in future devices of micro/nanometric blue light emission diode.