多晶硅发射极双极晶体管的工艺设计及计算机模拟

Technology Design and Computer Simulation of Polysilicon Emitter Bipolar Transistors

在简要分析多晶硅发射极双极晶体管特点的基础上 ,根据国内现有的双极工艺水平 ,设计了用于制备多晶硅发射极双极晶体管的工艺流程 ,并给出了一个最小尺寸晶体管的版图 ,最后对设计的多晶硅发射极晶体管的频率特性进行了模拟。

After a brief analysis of the advantages of polysilicon emitter bipolar transistors, a new technological process for the transistors is designed in this paper according to the bipolar technology available in our country, and the layout of a minimum size transistor is represented. Finally, the frequency characteristic of the designed transistor has been simulated.