摘要
Ga N具有禁带宽、热导率高、电子饱和漂移速度大和介电常数小等特点 ,在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。本文介绍了 Ga N基半导体材料的制备方法 ,异质结构以及在光电子和微电子器件领域的应用 。
GaN materials the characteristics of wide bandgap, high thermal conductivity, large electron saturation shift velocity and low dielectric constant. They have wide applications in those fields such as high brightness light emitting diodes, short wavelength laser diodes, high performance UV detector, and high temperature, high frequency, large power semiconductor devices. This paper introduces the growth methods, heterostructure and its applications in optoelectronic and micorelectronic fields of GaN semiconductor materials, followed by our opinions of the analysis for further studies.
出处
《电子器件》
CAS
2002年第1期1-8,共8页
Chinese Journal of Electron Devices
基金
国家863项目新材料领域课题(715 -0 11-0 0 3 3 )
国家自然科学基金(699760 0 8)
关键词
外延生长
基材
氮化镓
光电器件
GaN
epitaxy growth
doping
semiconductor devices