GaN基材料生长及其在光电器件领域的应用

Growth Methods and Its Applications in Optoelectronic Devices of GaN-Based Semiconductor Materials

Ga N具有禁带宽、热导率高、电子饱和漂移速度大和介电常数小等特点 ,在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。本文介绍了 Ga N基半导体材料的制备方法 ,异质结构以及在光电子和微电子器件领域的应用 。

GaN materials the characteristics of wide bandgap, high thermal conductivity, large electron saturation shift velocity and low dielectric constant. They have wide applications in those fields such as high brightness light emitting diodes, short wavelength laser diodes, high performance UV detector, and high temperature, high frequency, large power semiconductor devices. This paper introduces the growth methods, heterostructure and its applications in optoelectronic and micorelectronic fields of GaN semiconductor materials, followed by our opinions of the analysis for further studies.