氮化铁薄膜的制备及其磁电阻效应

MAGNETORESISTANCE OF Fe-N FILM PREPARED BY REACTIVE MAGNETRON SPUTTERING

用磁控反应溅射法制备了铁和氮化铁薄膜 ,分别测出其 X射线衍射谱 ( XRD) ,分析表明存在氮化铁薄膜 .在室温下测量了制备态和退火样品的磁电阻 。

Using the reaction magnetron sputtering technique, the samples of the thin film Fe and FeN have been prepared, respectively. From the analysis of XRD spectra, the FeN thin film is found to be exist. The magnetoresistance (MR) has been measured under room temperature before and after annealing, the result shows that after annealing the MR is enhanced.