摘要
分析了常规高压MOSFET的耐压与导通电阻间的矛盾,介绍了内建横向电场的高压MOSFET的结构,分析了解决耐压与导通电阻间矛盾的方法与原理,介绍并分析了具有代表性的新型高压MOSFET的主要特性。
The contradiction between withstand voltage and on resistance of high voltage MOSFET is analyzed. Its struction with horizontal orientation electric field is introduced, the method and priciple oi resolving the contradiction between withstand voltage and on resistance are construed and the main characterics of this new type of high power MOSFET with representativeness arc presented.
出处
《电源技术应用》
2002年第1期43-45,共3页
Power Supply Technologles and Applications