外连式SnO_2导电膜非晶硅太阳电池

Outer connection amorphous silicon solar cell based on SnO_2 conductive film

介绍了用化学气相法沉积大面积透明SnO2 :F膜的制作与原理。提出了一种大面积透明SnO2 :F膜的腐蚀成型方法 ,即用通用抗蚀干膜经曝光、显影形成所要图形 ,用稀释的粘接剂与锌粉按一定比例混合 ,用丝网印刷工艺将其均匀地涂覆在抗蚀干膜之上 ,放入盐酸溶液中腐蚀SnO2 :F膜 ,得到了边缘整齐、无针孔的图形。将腐蚀成型的SnO2 导电玻璃经清洗送入非晶硅沉积室 ,采用辉光放电法顺序沉积p、i、n三层 ,在高真空容器中蒸发铝电极 ,制作了外连式SnO2 导电膜非晶硅太阳电池 ,并与外连式氧化铟锡 (ITO)导电膜非晶硅太阳电池进行了比较 ,电性能明显提高 ,尤其是短路电流平均提高了 2 9.3 % ,在 2 0 0lx白荧光灯照射下 ,单位面积最大输出功率达 7.76μm /cm2 。

The principle and fabrication technology of TCO (transparent conduct oxide) SnO 2:F film with large area by chemical vapor deposition (CVD) method was described. An etching formation method for fabricating TCO SnO 2:F film with large area was introduced. That is, a common corrosion resistant film forms the required pattern by exposure and development, then mix the diluted adhesive solvent and zinc powder with a certain proportion and spread the mixture onto the corrosion resistant film homogeneously by silk screen process. Next, put the film into HCL solution to etch the SnO 2:F film, thus the pattern with high quality is obtained. Put the etched SnO 2 conductive glass into amorphous silicon depositing chamber and deposite p a Si,i a Si and n a Si orderly by glow discharge method, then evaporate the aluminum electrode in high vacuum degree container, the outer connection amorphous silicon solar cell based on SnO 2 conductive film is finally fabricated. Compared with outer connection solar cell based on indium tin oxide(ITO) conductive film, its electrical performance is obviously improved, especially the average short circuit current is increased up to 29.3% and the maximum output is 7.76 μm/cm 2 under 200 lx white fluorescent light.