CdTe薄膜的制备和后处理研究

STUDY OF DEPOSITION AND ANNEALING OF CdTe FILMS

用近空间升华法制备CdTe薄膜 .研究了在不同衬底材料、基片温度下薄膜的微结构 .衬底温度在 4 0 0℃以上薄膜结晶状况较为完整 .结晶状况较好的CdS薄膜上生长的CdTe薄膜晶粒较大 ,尺寸均匀 .对CdTe薄膜进行了加热后处理研究 ,结果表明 ,加用CdCl2

s: CdTe films have been prepared by closed-space sublimation method. Film crystalline depending on substrate materials and substrate temperature is studied. It has been found that films show higher crystallinity on substrate temperature above 400℃. And the CdTe films deposited on CdS films with higher crystallinity has bigger crystallite and higher uniformity. The results of heat treatment of CdTe films show that the using of CdCl 2 promotes the crystallite growth of CdTe films in annealing course.