聚硅烷用作紫外亚微米光刻胶

The Study on the Photolithographic Effect of Using Polysilane As Photoresist for Uv Submicron Photolithography

讨论了用醇酸树脂或聚氨脂树脂为平坦层 ,几种不同的枝状和线状聚硅烷为抗蚀层 ,在玻璃基片上的XeCl准分子激光光刻效果 .由于聚硅烷与其它树脂相容性不好 ,作者将含氯聚硅烷作为添加剂添加到枝状聚硅烷中进行光刻实验 ,获得最小分辨率为 0 .5 μm的明暗线条等宽图形 ,对以不同聚硅烷相互作为添加剂 ,将其配方性能优化进行了有益的尝试 .

The effects of photolithography on substrates with photoresist of some different branched or line polysilanes and planar-layer of polyurethane resin or alkyd resin, which were irradiated by 308nm XeCl excimer laser, were discussed. Considering bad compatibility with other polymers, the photolithographic experiments were performed after polysilane containing chlorine was added into branched polysilane as addition. The patterns of equi-spaced light and shade line with the least resolution of 0.5μm could be obtained. Optimizations of properties of the formulae were attempted by using various polysilanes as additions mutually. Many factors, which may have effects on the qualities of the transferred patterns, were discussed qualitatively.