摘要
利用元素合成法合成了具有单一黄铜矿结构的CuInSe_2(CIS)多晶材料。通过微处理机控制系统,控制蒸发CIS和Cu或控制蒸发CIS和Se制备CIS薄膜。对制备的CIS薄膜的光学性质、电学性质、组份、结构与工艺条件的关系进行了讨论。
In this paper,the polycrystalline CuInSe2 (CIS) materials with single chalcopyrite structure were synthesized by direct elemental combination method.The preparation method of polycrystalline thin film CIS are studied.Satisfactory results were obtained by using double source method evaporating meterial CIS and Cu or evaporating CIS and Se controlled by micro-computer control system in a vacuum chamber with pressure 1×10-6 mmHg during codepositions.The optical,electrical,crystallographic properties and composition of polycrystalline thin film CIS are discussed in relation to preparetion conditions.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1991年第1期33-40,共8页
Acta Energiae Solaris Sinica
基金
国家自然科学基金
