半导体Si、Ge表面原子构造

Atomic Structure of Semiconductor Si Ge surfaces

本文主要就目前半导体Si、Ge材料的低指数表面的重构种类、有关的理论模型、它们之间的相互转换条件及研究手段作了简要评述.

A review of recent work on the reconstructions of the low-index surfaces of Silicon and Germariun , their theoretical models phase transition conditions and various measurement techniques is presented.