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可编程器件的瞬时电离辐射效应及加固技术研究 被引量：4

The Transient Radiation Effects and Hardness of Programmed Device
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摘要 概述了国内外瞬时电离辐射效应的研究历程。针对空间电子学系统常用的两种类型可编程器件(32位微控制器和反熔丝FPGA),分别研制了辐照试验长线动态测试系统,在"强光一号"脉冲加速器上开展了γ瞬时电离辐照试验。试验数据表明:32位微控制器的瞬时电离辐射效应表现为复位重启和闭锁,闭锁阈值为6×107Gy/Si.s,反熔丝FPGA的瞬时电离辐射效应表现为瞬时扰动和复位重启,二者的工作电流都随着剂量率的增加而升高。分析了两种可编程器件的瞬时电离辐射损伤机理,提出了一种"瞬时回避+数据备份与恢复"的抗瞬时电离辐射的电路设计加固方法。 A review and summary of research and development in the investigation of transient ionizing radiation effects in devices and circuits is presented .The transient ionizing radiation effects in two type of programmed devices , namely 32 bit Microcontroller and anti -fuse FPGA, were studied .The experimental test data indicate：The transient ionizing radiation effects of 32 bit Microcontroller manifested self -motion restart and Latchup , the Latchup threshold was 5 107 Gy/Si.s.The transient ionizing radiation effects of FPGA was mainly reset , not Latchup .The relationship of circuit effects to physical mechanisms was analyzed .A new method of hardness , instantly blocking and data reserving and recovery , in circuits design was put forward .
作者 杜川华 许献国 赵海霖 赵洪超
机构地区 中国工程物理研究院电子工程研究所
出处 《核电子学与探测技术》 CAS CSCD 北大核心 2014年第3期369-374,共6页 Nuclear Electronics & Detection Technology
关键词 可编程器件 瞬时电离辐射效应 32位微控制器 反熔丝FPGA programmed device transient ionizing radiation effects 32 bit Microeontroller anti - fuse FPGA
分类号 O536 [理学—等离子体物理]
  • 相关文献

参考文献19

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二级参考文献20

  • 1杜川华,詹峻岭,徐曦.反熔丝FPGA延时电路γ瞬时辐射效应[J].强激光与粒子束,2006,18(2):321-324. 被引量：9
  • 2周开明,谢泽元,杨有莉.瞬时辐射对80C31单片机性能的影响[J].核电子学与探测技术,2006,26(6):981-984. 被引量：7
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  • 10GREGORY B L,SHAFER B D.Latch-up in CMOS integrated circuits[J].IEEE Trans Nucl Sci,1973,20(6):293-299.

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核电子学与探测技术
2014年 第3期

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