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40Gb/s光通信系统驱动放大器设计 被引量：3

A driver amplifier for 40Gb/s optical communication system
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摘要 针对40Gb/s光通信系统对高速芯片的需求,设计出一种微波单片宽带驱动放大器。该放大器基于0.15μm砷化镓赝配高电子迁移率晶体管工艺,可用于驱动铌酸锂调制器。放大器的宽带实现方案选择分布式拓扑结构,增益单元选择带有耦合电容的共源共栅结构。利用ADS仿真软件进行设计仿真,结果显示,所设计的放大器在DC-35GHz的工作带宽内增益响应平坦,电压增益大于10dB,增益平坦度为±0.5dB,具驻波特性良好,其输入、输出反射系数在频带内的典型值均小于-10dB;在1dB压缩点的输出功率为20dBm,故设计方案可行。 A micro-wave wideband amplifier used to drive the LiNbO3 modulator is designed in this paper to meet the demand of the high-speed chips in 40 Gb/s optical communication system. The amplifier is based on 0 .1 5 μm GaAs pseudomorphic high electron mobility transistor （PHEMT）process and consists of six-stages cascode cells with capacitive coupling.This ampli-fier has very flat gain in the bandwidth DC-35 GHz and its gain is higher than 10 dB and flatness better than ±0.5 dB.Also,this amplifier has good VSWR at the input and output port that is below -10 dB and its output power at 1 dB compression point is about 20dBm.Therefore the de-sign is feasible.
作者 巩稼民 李欢 张博
机构地区 西安邮电大学电子工程学院
出处 《西安邮电大学学报》 2014年第4期85-89,共5页 Journal of Xi’an University of Posts and Telecommunications
基金 国家自然科学基金青年基金资助项目(61201044) 陕西省自然科学基金青年基金资助项目(2012JQ8020) 西安邮电大学青年教师科研基金资助项目(1010436)
关键词 光通信 砷化镓赝配高电子迁移率晶体管 分布式放大器 共源共栅 铌酸锂调制器 optical communication GaAs pseudomorphic high electron mobility transistor dis-tributed amplifier cascode LiNbO3 modulator
分类号 TN722 [电子电信—电路与系统]
  • 相关文献

参考文献10

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二级参考文献18

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共引文献15

同被引文献24

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西安邮电大学学报
2014年 第4期

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