摘要
The tunnel field-effect transistor(TFET) is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET(DG-TFET) gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.
The tunnel field-effect transistor（TFET） is a potential candidate for the post-CMOS era.As one of the most important electrical parameters of a device,double gate TFET（DG-TFET） gate threshold voltage was studied.First,a numerical simulation study of transfer characteristic and gate threshold voltage in DG-TFET was reported.Then,a simple analytical model for DG-TFET gate threshold voltage VTG was built by solving quasi-two-dimensional Poisson equation in Si film.The model as a function of the drain voltage,the Si layer thickness,the gate length and the gate dielectric was discussed.It is shown that the proposed model is consistent with the simulation results.This model should be useful for further investigation of performance of circuits containing TFETs.
基金
Project(P140c090303110c0904)supported by NLAIC Research Fund,China
Project(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of China
Projects(K5051225014,K5051225004)supported by the Fundamental Research Funds for the Central Universities,China
Project(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China
