BRAQWET能带结构和优化设计参量

Band Structure and Optimum Parameters Of BRAQWET

对 n型源区、p型势垒区和具有 δ(p+ )薄层势垒区的两种结构 BRAQWET的能带模型 ,作了严格的定量分析 ,由此可以导出设计良好器件的优化参量。这是设计

A quantitative analysis of band structure about BRAQWET, which has two kinds of device structure, n reservoir p barrier and n reservoir n barrier with δ(p +) layer, was presented in this paper. Some optimum parameters, therefore, were derived. This is a theoretical basis of designed BRAQWET.