摘要
研究了用注 F工艺制作的短沟 MOSFET的热载流子效应。实验结果表明 ,在栅介质中注入适量的 F能够明显地减小由热载流子注入引起的阈电压漂移、跨导退化和输出特性的变化。分析讨论了
Hot carrier effects in fluorinated short channel MOSFET have been investigated. The experimental results have shown that by incorporating a minute amount of fluorine into internal SiO 2, the generation of interface states and oxide trapped charges can be suppresed to improve the shift of threshold voltage and degradation of transconductance. The mechanism of hot carrier damage have been analyzed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2002年第1期29-31,44,共4页
Research & Progress of SSE
