高速低阈值半导体激光器速率方程模型参数的直接确定

The Direct Extraction of the Rate Equation Model Parameters for the High-speed Low- threshold Semiconductor Laser

针对高速低阈值半导体激光器提出一种模型参数的直接确定方法。该方法仅利用阈值附近端口阻抗特性和阈值以上弛豫振荡频率特性来提取半导体激光器的模型参数 ,无需拟合激光器的强度调制 (IM)频率响应特性或者相对噪声强度特性 ,但是需要器件的有源区结构参数和对光限制因子 Γ的估算。研究表明当光限制因子Γ确定时 。

A new method which directly extracts the model parameters for the high speed low threshold semiconductor laser is presented, where only the terminal impedance characteristics near the threshold and the relaxation oscillation frequency characteristics above the threshold are used. It is not necessary to fit the intensity modulation frequency response or the relative noise intensity response avoiding the affect of optical feedback. The study shows that when the optical confinement factor is given, the device model parameters are unique which are different from the results of the previous references.