5～20 MeV高能质子辐照对空间实用GaAs/Ge太阳电池性能的影响

5～20 MeV PROTON IRRADIATION EFFECTS ON GaAs/Ge SPACE SOLAR CELLS

用能量为 5～ 2 0MeV ,注量为 1× 10 9～ 7× 10 13 cm- 2 的高能质子对空间实用GaAs/Ge太阳电池进行辐照 ,得到了其性能随质子能量和注量的变化关系 ,并对变化关系进行了能损模拟分析 .结果表明 :注量低于 1× 10 9cm- 2 的质子辐照不会引起太阳电池性能的变化 ;当注量增加为3× 10 12 cm- 2 时 ,5 ,10 ,2 0MeV质子辐照引起的太阳电池性能参数Isc的衰降变化分别是原值的80 % ,86 % ,90 % ;Voc的衰降变化分别为原值的 82 % ,85 % ,88% ;Pmax的衰降变化分别为原值的6 0 % ,6 4 % ,6 7% .当辐照注量为 5× 10 13 cm- 2 时 ,5 ,10 ,2 0MeV质子辐照引起的Pmax衰降变化分别为原值的 2 6 % ,30 % ,36 % .即随着注量的增加 ,太阳电池性能衰降增大 ;且相同注量的辐照 ,质子能量愈高 ,太阳电池性能衰降愈小 .

High energy proton irradiation effects on GaAs/Ge solar cells for space use are studied. The cells are irradiated by protons with an energy of 5 20 MeV up to a fluence ranging from 1×10 9 to 7×10 13 cm -2 , and then the change of the photovoltaic performances is measured at AM0. It is shown that the performances of the cells keep no change under 1× 10 9 cm -2 irradiation. Above 1×10 9 cm -2 irradiation, I sc , V oc and P max degrade, as proton irradiation fluence increases. But the higher the proton energy, the less the degradation of I sc , V oc and P max .