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IGBT极限电流与极限功耗的识别方法 被引量：2

Identification Method of IGBT Limiting Current and Limiting Power Loss
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摘要 研究了 IGBT在过电流的状态下 ,静态输出特性及动态电流和电压波形的变化规律 ,提出了 IGBT极限电流与极限功耗的识别方法 ,阐明了因过电流和过损耗致使 This paper focuses on the static output characteristics as well as the changing laws of dynamic waveforms of device current and voltage in the state of over current.An identification method for IGBT's critical current and critical power loss is first proposed.The mechanism of device failure from the over current and power loss is analyzed.
作者 周文俊 刘希真 李正勤 张立
机构地区 温州大学信息科学与工程学院 天津大学自动化与能源工程学院
出处 《天津大学学报（自然科学与工程技术版）》 EI CAS CSCD 北大核心 2002年第2期239-242,共4页 Journal of Tianjin University：Science and Technology
关键词 IGBT 绝缘门极晶体管 极发功耗 极限电流 识别 失效机理 IGBT critical power loss critical current identification failure mechanism
分类号 TN322 [电子电信—物理电子学]
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参考文献2

  • 1[1]Hagino H,Yamashita J,Uenishi A,et al.An experimental and numerical study on the forward biased SOA of IGBT[J].IEEE Transaction on Electron Device,1996,43(3):490-499.
  • 2[2]Yue Y,Liou J,et al.An analytical insulated-gate bipolar transistor model for steady atate and transient applications under all free-carrier injection condition[J].Solid State Electron,1996,39(9):1277-1282.

同被引文献23

  • 1维捷斯拉夫·本达,约翰·戈沃,邓肯A·格兰特,等.功率半导体器件-理论及应用[M].吴郁,张万荣,刘兴明,等译.北京:化学工业出版社,2005,5:145-146.
  • 2Wei Lixiang,Richard A,Thomas A.Analysis of power cycling capability of IGBT modules in a conventional matrix converter[J].IEEE Transactions on Industry Applications,2009,45(4):1443-1451.
  • 3Ciappa M,Carbognani F,Fichtner W.Lifetime predi- ction and design of reliability tests for high-power devices in automotive applications[J].IEEE Transa- ctions on Device Mater,2003,3(4):191-196.
  • 4Michael J,Ewart B,Gary D.Analysis of high-power IGBT short circuit failures[J].IEEE Transactions on Plasma Science,2005,33(4):1252-1261.
  • 5Musumeci S,Pagano R,Raciti A.A new gate circuit performing fault protections of IGBTs during short circuit transients[C]//37th IAS Annual Meeting Conference,Pittsburgh,USA,2002:2614-2621.
  • 6Sheng Kuang,Wiliams B W,He Xiangning,et al.Measurement of IGBT switching frequency limits[C]// Power Electronics Specialists Conference,South Carolina,1999:376-380.
  • 7Zhou Wenjun,Liu Xizhen,Li Zhengqin,et al.Identification method of IGBT limiting current and limiting power loss[J].Journal of Tianjin University,2002,35(2):239-242.
  • 8Chen D,Lee F C,Carpenter G.Nondestructive RBSOA characterization of IGBT's and MCT's[J].IEEE Transactions on Power Electronics,1995,10(3):368-372.
  • 9Busatto G,Abbate C,Iannuzzo F.Non destructive SOA testing of power modules[C]//Proceeding of Integrated Power Electronics Systems,Nuremberg,2010:1-6.
  • 10Hagh M T,Abapour M.Nonsuperconducting fault current limiter with controlling the magnitudes of fault currents[J].IEEE Transactions on Power Elec- tronics,2009,24(3):613-619.

引证文献2

二级引证文献30

天津大学学报（自然科学与工程技术版）
2002年 第2期

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