Ge-SiO_2薄膜的XPS研究

XPS Analysis of Ge-SiO_2 Thin Film

采用射频磁控溅射技术制备了Ge SiO2 薄膜 ,在N2 气氛下进行 30 0℃到 1 0 0 0℃的退火处理 30分钟 ,对样品进行XPS分析 ,研究了在不同退火温度下薄膜样品的成分与化学状态 ,为进一步探讨薄膜的光致发光机理提供了依据。结合XRD谱图分析结果可发现 ,退火处理对纳米晶粒的形成与长大起着关键作用。随着退火温度的升高 ,样品中的Si向高价态转化 ,Ge则向低价态转化 ;GeO含量在 80 0℃退火样品中为最大 ,高于 80

The Ge SiO 2 thin films are obtained by magnetron sputtering with a composite target of a Ge wafer and a SiO 2wafer. The films are annealed in N 2 atmosphere at 300～1000℃ for 30 minutes. The composition and chemical status of the film sample at the different annealing temperatures are studied by XPS, which provide the basis for further reseaching the mechanism of the photoluminescence of the film. From the XRD spectrum it is found that the annealing plays a key part in the nano crystal grain forming and growing. As the annealing temperature increases the Si in the sample transforms to high valence and the Ge to low valence. The content of GeO in the sample is maximum when it is annealed at 800℃ and decreases rapidly when it is annealed at the temperature higher than 800℃.