摘要
IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when it is in on- state since the channel of the p- MOSFET is pinched- off.During the course of turning off,the channel of the p- MOSFET will prevent the injection of m inorities and introduce an extra access for the carriers to flow to the anode directly,which m akes the IGBT reach its off- state in a shorter time.The simulation results prove that the new structure can reduce the turn- off time by m ore than75 % compared with the normal one under the same break- down voltage and on- state perform ance.Only two more resistors are needed when using this structure,and the re- quirement of the drive circuits is just the sam e as normal.
利用动态控制阳极短路的基本原理 ,提出了一种实现高速 IGBT的新思路 .该结构的关键是引入了一个常开型 p- MOSFET,在 IGBT导通时关断 ,不增加导通损耗 ,而在器件关断过程中能阻止阳极继续向漂移区注入少数载流子 ,同时为载流子流入阳极提供一条通道 ,使其快速关断 .理论分析和模拟结果证明 ,该结构在击穿电压、导通损耗不变的情况下 ,能将关断时间减少 75 %以上 .应用这样的结构只需增加两个分压比一定的分压电阻 .新结构对驱动电路的要求与普通 IGBT完全一致 ,是一种实用的高速 IGBT结构 .
基金
国家自然科学基金资助项目 ( No.6 9776 0 41)~~
