摘要
针对硅在 KOH中的各向异性腐蚀提出了一个新的物理模型 .此模型从微观角度出发 ,根据实际的腐蚀化学反应过程确定了若干微观状态 ,提出了反映腐蚀特性的若干微观参数 .将腐蚀温度、浓度等对腐蚀速率的影响也反映了进去 .计算结果与实验结果进行了对比 ,表明此模型在解释硅在 KOH中各向异性腐蚀特性等方面具有一定的合理性 .
A novel physical model for describing the process of silicon anisotropic wet chem ical etching is proposed.Based on the actual process of etching chemical reaction,non- linear equations are presented and a series of m icroscopic- param eters are creatively put forward,including the influence of etching tem perature and etchant concentration.Com paring the calculated re- sults against the experim ental data,the model and its parameters are shown to be suitable.
基金
国家重点基础研究计划资助项目 (编号 :G19990 330 10 9)~~
关键词
硅
KOH
物理模型
各向异性腐蚀
anisotropic etching
activation energy
etching rat
