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半导体材料研究的新进展(续) 被引量:2

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作者 王占国
出处 《半导体技术》 CAS CSCD 北大核心 2002年第4期8-11,共4页 Semiconductor Technology
基金 国家重点基础研究发展计划项目“信息功能材料相关基础问题”(G2000068300);国家自然科学基金委员会的资助;中国科学院半导体材料科学重点实验室
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同被引文献14

  • 1鲁泥藕,余怀之,霍承松,汪飞琴,石红春.大功率激光窗口ZnSe的制备原理及方法[J].功能材料,2004,35(z1):246-248. 被引量:6
  • 2李华,程兴奎,周均铭,黄绮.掺杂GaAs/Al_(0.3)Ga_(0.7)As超晶格的光致发光特性分析[J].真空电子技术,2005,18(3):17-19. 被引量:2
  • 3姜力,吴苍生,王玉田,高维宾.MBE[(AI_xGa_(1-x)As)_l(GaAs)_m]_n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究[J].Journal of Semiconductors,1989,10(2):86-92. 被引量:8
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  • 6A.Urbiata, P. Femaade,J.Piqueras, et al. Scanning ElectronMicroscopy Characterization of ZnSe Single Crystals Grownby Solid-phase Recrystallization [J]. Materials Science andEngineering B’ 2000, 78 (2): 105-108.
  • 7Esaki L,Tsu R C. Superlattice and negativedifferential conductivity in semiconductors[J]. IBM J.Research and Development, 1969,14(1) : 61-62.
  • 8West L C,Eglash S J. First observation of anextremely large-dipole infrared transition within theconduction band of a GaAs quantum well [J]. Appl.Phys. Lett.,1985,46(12): 1156-1158.
  • 9Gunapala S D, Bandara S V, Singh A,et al. 640 486long-wavelength two-color GaAs/AlGaAs quantumwell infrared photodetector (QWIP) focal plane arraycamera[J]. IEEE Trans. Electron Devices,2000,47(5):964.
  • 10Gunapala S D,Bandara S V,Liu J K,et al. Towardsdualband megapixel QWIP focal plane arrays C J D*Infrared Phys. and Technol.,2007,50: 217-226.

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