摘要
通过实验分析了大直径直拉硅片中间隙氧含量对原生新微缺陷的影响,并对具有不同间隙氧含量的硅片进行热处理实验。结果发现间隙氧含量影响到晶体中新微缺陷的密度,通过高温退火可显著降低微缺陷的密度。
In this paper, the correlation between interstitial oxygen concentration and new grow-in defect in large-diameter CZSi are investigated.Wafers with different interstitial oxygen concen-tration were annealed at different temperature. The result shows that defect density is proportionalto the interstitial oxygen concentration and high temperature annealing can reduce the defect density.
出处
《半导体技术》
CAS
CSCD
北大核心
2002年第3期21-24,共4页
Semiconductor Technology
基金
国家自然科学基金(69876011)
河北省自然科学基金
河北省科技攻关计划资助项目
