直拉硅中氧沉淀的TEM研究

TEM investigation of oxygen precipitates in czochralski silicon

论述了使用透射电镜来研究氧沉淀的形态与热处理温度和时间的关系。对氧沉淀的生成动力学,研究的现状和存在的问题以及发展前景也进行了讨论。

In this paper, the dependence of oxygen precipitate morphology studied by means ofTEM on the temperature and time of heat treatments has been reviewed. The kinetics of the oxygenprecipitate growth, the existed problem and its prospect are also discussed.