4H-SiC MOSFET的温度特性研究

Study on the temperature properties of 4H-SiC MOSFET

对 4H SiCMOSFET的器件结构和温度特性进行了研究 ,总结了器件的结构参数对特性的影响 ,比较了不同温度下的输出特性以及饱和漏电流、阈值电压、跨导、导通电阻与温度的变化关系 ,模拟结果表明 4H SiCMOSFET具有优异的温度特性 ,在 80

The device structure and temperature properties of 4H-SiC MOSFET have been studied. The influence of the device's structure parameter on its properties is summarized. The properties are compared at different temperatures and the variations of saturation drain current, threshold voltage, transconductance, on-resistance with temperature are presented. Simulation results show that 4H-SiC MOSFET can operate at 800K with excellent temperature properties.