垂直梯度凝固法生长半绝缘GaAs单晶的工艺研究

A study on vertical gradient freeze technique of semi-insulating GaAs crystals

在国产三温区VGF单晶炉上,研究了非掺GaAs半绝缘单晶的液封垂直梯度凝固法生长技术。讨论了引晶、坩埚设计与质量、PBN坩埚的剥落、B2O3的水份控制等因素对单晶生长的影响,基本解决了VGF的工艺问题。通过多炉生长,得到了Φ2″=VGF非掺半绝缘低位错全单晶。

Total liquid encapsulated vertical gradient freeze (VGF) technique was used to grow undoped semi-insulating (SI) GaAs crystals in three-zone VGF furnace. The influences of the shape and quality of crucibles,PBN leather from crucibles and the water content of B2O3 encapsulation on reproducible single crystal growth were investigated. As a result, a Φ2″ undoped SI GaAs single crystal was achieved.