STM中各种金属针尖/基底组合下的蒸发场强计算

CALCULATION OF EVAPORATION FIELDS FOR VARIOUS TIP/SUBSTRATE COMBINATIONS IN THE CONFIGURATION OF A SCANNING TUNNELING MICROSCOPE

稍前通过引入有效结合能的概念,本文作者重新建立了扫描隧道显微镜的蒸发场强公式,并计算了若干同种金属针尖与金属基底组合下的蒸发场强。本文进一步给出了更多的计算实例,特别是重点讨论了异种金属针尖与金属基底组合下的蒸发场强计算。为了确定不同针尖样品间距时的有效结合能,本文提出了一个普适函数,来描述吸附原子离金属基底不同距离时的原子势能曲线。

An effective binding energy and a formula f'or evaporation fields in tlie configu-ration of a scarming tunneling microscope has been introduced. Based on which, evaporation fields for various tip/substrate combinations, especially those for non-identical tip/substrate combinations have been calculated. To do this a universal function for atomic potential of an adatom at different distances from a metai surface is proposed.