长波长、高灵敏度的InP/InGaAs谐振腔光电探测器

High Efficiency,High Speed InP/InGaAs Resonant-Cavity Photodetector Operating at Long Wavelengthes

本文报道了一种能够实现高速、高灵敏度的 In P基谐振腔增强型 (RCE)光电探测器。它采用衬底入光方式 ,解决了在 In P衬底上外延生长的 In P/In Ga As P介质膜分布布拉格反射镜 (DBR)反射率低的问题 ,该探测器的吸收层厚度为 0 .2 μm,在波长 1.5 83μm处获得了 80 %的峰值量子效率。同时为了降低探测器的固有电容 ,利用质子注入技术使得器件的部分电极绝缘 。

In this paper,an InP/InGaAs resonant cavity enhanced (RCE) photodetector which is promising of high speed,high efficiency is reported.The rear illuminated was adopted,to circumvent the problem of the low reflectivity of InP/InGaAsP distribute Bragg reflector (DBR) grown on InP substrate,and quantum efficiency of 80 % at 1.583 μm has been achieved with an absorption layer only 0.2 μm.To achieve high speed operation the capacity of photodetector was reduce without decrease of the quantum efficiency,via proton implantation.