摘要
主要介绍在制作一种压阻式微硅高 g(g =9 8m/s2 ,微重力加速度值 )加速度传感器的过程中 ,所遇到的工艺问题及其解决方法。并较详细地叙述了涉及到的键合 (SDB)、双面光刻及传感器几何图形的精确控制等关键技术。
Technology problems and their solutions during making a kind of micro piezoresistive high-g acceleration sensor are presented. The key techniques including SDB, double-side lithography and the control of the geometric patterns of the sensor are also introduced in detail.
出处
《仪表技术与传感器》
CSCD
北大核心
2002年第4期1-3,共3页
Instrument Technique and Sensor
