高温压力传感器温度特性的芯片内补偿技术

An On-chip Temperature Compensation Technology of Polysilicon Pressure sensor

本文在分析、测试多晶硅高温压力传感器温度特性的基础上 ,提出了一种新的改善传感器温度特性的措施。通过在压力传感器芯片上集成低阻值的多晶硅电阻网络与温度传感器 ,不仅可以很好的补偿传感器的零点温漂 ,也可以借助传感器信号处理单元 ,方便地实现对灵敏度温度系数的补偿。经补偿 ,传感器的零点温漂达到 1× 10 -4/℃ ,灵敏度温漂小于 -2× 10 -4/℃。实验表明 :该方法的补偿温区宽 ,通用性强 。

After consecutive analysis and substantive tests of the temperature coefficients of polysilicon pressure sensors, a new method to improve the temperature dependence of the sensor is presented in this paper. By means of integrating polysilicon resistor network with low resistance and a temperature sensor on chip, and using the signal processing circuit, the temperature coefficients of offest (TCO) and sensitivity (TCS) of the pressure sensor are effectively compensated to 1×10 -4 /℃ and -2×10 -4 /℃ respectively. Showing advantages of wide compensating range and good compatibility, this method is a quite practical way for temperature compensation of the high temperature piezoresistive pressure sensor.