期刊文献+

硅、锗材料在Si(100)表面的生长研究 被引量:3

Study of Si and Ge Growth on Si(100) Surface
下载PDF
导出
摘要 利用扫描隧道显微镜和超高真空实验装置系统进行了Si(10 0 )表面生长Si,Ge的实验研究。分析了所生成表面的形貌、结构等物理性质。研究表明 :Si在Si(10 0 )表面的同质生长可以形成纳米结构薄膜。Ge在Si(10 0 )表面生长形成规则的三维小岛。而在Si/Ge/Si(10 0 )多层膜上生长则形成大小二种三维岛。 Utilizing scanning tunneling microscope and UHV system, the growth of Si and Ge on Si(100) surface have been investigated. The morphological and structural properties of the surfaces are studies. A nano-patterned Si film can be produced by homoepitaxy on Si(100). The growth of Ge on Si(100) will form regular 3D islands. On the multilayer film of Si/Ge/Si(100), the Ge will form regular small and big is lands. The big islands are probably stabilized by a Ge/Si/Ge shell structure.
出处 《真空科学与技术》 EI CSCD 北大核心 2002年第2期104-106,111,共4页 Vacuum Science and Technology
基金 中国自然科学基金资助项目 (199740 3 6)
关键词 扫描隧道显微镜 半导体材料 表面生长 半导体薄膜 结构 Germanium Scanning tunneling microscopy Silicon Surface structure
  • 相关文献

参考文献11

  • 1[1]Wu Y,Takeguchi M et al.Jpn J Appl Phys,1999,38:7241
  • 2[2]Teichert C,Bean J C,Lagally M G.Appl Phys A,1998,67:675
  • 3[3]Kamins T I,Williams R S.Appl Phys Lett,1997,71:1201
  • 4[4]Schittenhelm P,Gail M,Brunner J et al.Appl Phys Lett,1995,67:1292
  • 5[5]Kamins T I,Carr E C,Williams R S et al.J Appl Phys,1997,81:211
  • 6[6]Thanh V L,Yam V,Boucaud P et al.Phys Rev B,1999,60:5851
  • 7[7]Power J R,Hinrichs K,Peters S et al.Phys Rev B,2000,62:7378
  • 8[8]Ronald C,Gilmer G H.Phys Rev B,1993,47:16286
  • 9[9]Tersoff J,Teichert C,Lagally M G.Phys Rev Lett,1996,76:1675
  • 10[10]Chaparro S A,Zhang Y,Drucker J et al.J Appl Phys,2000,87:2245

同被引文献50

  • 1刘祖黎,张雪锋,姚凯伦,黄运米.溅射沉积Cu膜生长的Monte Carlo模拟[J].真空科学与技术学报,2005,25(2):83-87. 被引量:14
  • 2Zhong J X, Zhang T J, Zhang Z Y, et al. Island-comer barrier effect in two-dimensional pattern formation at surfaces.Phys Rev B, 2001, 63(11):113403
  • 3Iguain J L, Martin H O, Aldao C M. Model for diffusion and growth of silicon on Si(100) with inequivalent sites in a square lattice. Phys Rev B, 1996, 54(12):8751
  • 4Kersulis S, Mitin V. Monte Carlo simulation of growth and recovery of silicon. Mater Sci Eng B, 1995, 119(1-3):34
  • 5Levine S W, Engstron J R, Clancy P. A Kinetic Monte Carlo study of the growth of Si on Si(100) at varying angles of incident deposition. Surf Sci, 1998, 401(1):112
  • 6Tavazza F, Nurminen L, Landau D P, et al. Hybrid Monte Carlo-molecular dynamics algorithm for the study of islands and step edges on semiconductor surface:Application to Si/Si(001). Phys Rev E,2004,70(3) :36701
  • 7张佩峰,贺德衍.用Kinetic Monte Carlo方法模拟薄膜生长:[博士学位论文].兰州:兰州大学,2003
  • 8Toyoshima S, Kawamura T, Nishida S, et al. Surface diffusion during decay of nano-island on Si(100) at high temperature. Surf Sci, 2004,572(1) :84
  • 9Kawamura T, Toyoshima S, Ichimiya A. Decay of pyramidal nano-island formed on Si(100) studied by kinetic Monte Carlo simulation. Surf Sci, 2002,514(1-3) : 60
  • 10Stroscio J A, Pierce D T, Dragoset R A. Homoepitaxial growth of iron and a real space view of reflection-high-energy-electron diffraction. Phys Rev Lett, 1993, 70(23):3615

引证文献3

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部