脉冲偏压下沉积的立方氮化硼膜的断面结构研究

Microstructures of c-BN Film Deposited Using Pulsed DC Bias Technique

采用自行研制的磁增强活性反应离子镀系统 ,在脉冲偏压条件下成功地合成了高品质立方氮化硼 (c BN)薄膜。用傅立叶变换红外谱 (FTIR)分析沉积膜的相结构 ,用透射电镜 (TEM)及高分辨率透射电镜 (HRTEM)分析膜的断面结构。FTIR结果表明 :c BN的纯度强烈地受基片负偏压的影响 ,当基片负偏压为 15 5V ,c BN膜的纯度高达 90 %以上。TEM及HRTEM对膜的断面结构分析表明 ,在膜与基片的界面处存在很薄的非晶氮化硼和六方氮化硼 (h BN)层 ,h BN(0 0 0 2 )晶面垂直于基片表面 ,在界面层之上生长着单相c

High quality cubic boron nitride (c BN) films were synthesized in lab built magnetically enhanced active reaction evaporation system with pulsed DC bias.The c BN films were characterized with Fourier transform infrared spectrometry (FTIR),transmission electron microscopy (TEM),and high resolution transmission electron microscopy (HRTEM).The FTIR results show that the pulsed DC substrate bias voltage significantly affects the formation of c BN phase.For instance,155 V pulsed negative voltage results in a concentration higher than 90% of c BN in the film.TEM and HRTEM micro graphs show that thin a BN and h BN layers exist at the c BN and the substrate interface,and that (0002) h BN is in the surface normal direction of the substrate and single phase c BN grows on top of the interface layers.